1 motorola igbt device data designer's ? data sheet insulated gate bipolar transistor nchannel enhancementmode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. short circuit rated igbt's are specifi- cally suited for applications requiring a guaranteed short circuit withstand time such as motor control drives. fast switching characteristics result in efficient operation at high frequencies. ? industry standard high power to247 package with isolated mounting hole ? high speed e off : 150 j/a typical at 125 c ? high short circuit capability 10 s minimum ? robust high voltage termination maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 1200 vdc collectorgate voltage (r ge = 1.0 m w ) v cgr 1200 vdc gateemitter voltage e continuous v ge 20 vdc collector current e continuous @ t c = 25 c collector current e continuous @ t c = 90 c collector current e repetitive pulsed current (1) i c25 i c90 i cm 20 12 40 adc apk total power dissipation @ t c = 25 c derate above 25 c p d 125 0.98 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circuit withstand time (v cc = 720 vdc, v ge = 15 vdc, t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt thermal resistance e junction to ambient r q jc r q ja 1.0 45 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c mounting torque, 632 or m3 screw 10 lbf in (1.13 n m) (1) pulse width is limited by maximum junction temperature. repetitive rating. designer's data for aworst caseo conditions e the designer's data sheet permits the design of most circuits entirely from the information presented. soa limit curves e representing boundaries on device characteristics e are given to facilitate aworst caseo design. designer's is a trademark of motorola, inc. preferred devices are motorola recommended choices for future use and best overall value. rev 3 order this document by mgw12n120/d motorola semiconductor technical data mgw12n120 igbt in to247 12 a @ 90 c 20 a @ 25 c 1200 volts short circuit rated case 340k01 style 4 to247ae motorola preferred device g c e c e g ? motorola, inc. 1997
mgw12n120 2 motorola igbt device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectortoemitter breakdown voltage (v ge = 0 vdc, i c = 25 m adc) temperature coefficient (positive) v (br)ces 1200 e e 870 e e vdc mv/ c emittertocollector breakdown voltage (v ge = 0 vdc, i ec = 100 madc) v (br)ecs 25 e e vdc zero gate voltage collector current (v ce = 1200 vdc, v ge = 0 vdc) (v ce = 1200 vdc, v ge = 0 vdc, t j = 125 c) i ces e e e e 100 2500 m adc gatebody leakage current (v ge = 20 vdc, v ce = 0 vdc) i ges e e 250 nadc on characteristics (1) collectortoemitter onstate voltage (v ge = 15 vdc, i c = 5.0 adc) (v ge = 15 vdc, i c = 5.0 adc, t j = 125 c) (v ge = 15 vdc, i c = 10 adc) v ce(on) e e e 2.51 2.36 3.5 3.37 e 4.42 vdc gate threshold voltage (v ce = v ge , i c = 1.0 madc) threshold temperature coefficient (negative) v ge(th) 4.0 e 6.0 10 8.0 e vdc mv/ c forward transconductance (v ce = 10 vdc, i c = 10 adc) g fe e 12 e mhos dynamic characteristics input capacitance (v 25 vd v 0vd c ies e 930 e pf output capacitance (v ce = 25 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 126 e transfer capacitance f = 1 . 0 mhz) c res e 16 e switching characteristics (1) turnon delay time t d(on) e 74 e ns rise time (v cc = 720 vdc, i c = 10 adc, v 15 vd l 300 h t r e 83 e turnoff delay time ( cc , c , v ge = 15 vdc, l = 300 h r g = 2 0 w ) t d(off) e 76 e fall time r g = 20 w ) energy losses include atailo t f e 231 e turnoff switching loss e off e 0.55 1.33 mj turnon delay time t d(on) e 66 e ns rise time (v cc = 720 vdc, i c = 10 adc, v 15 vd l 300 h t r e 87 e turnoff delay time ( cc , c , v ge = 15 vdc, l = 300 h r g = 2 0 w , t j = 12 5 c) t d(off) e 120 e fall time r g = 20 w , t j = 125 c) energy losses include atailo t f e 575 e turnoff switching loss e off e 1.49 e mj gate charge (v 720 vd i 10 ad q t e 31 e nc (v cc = 720 vdc, i c = 10 adc, v ge = 15 vdc ) q 1 e 13 e v ge = 15 vdc) q 2 e 14 e internal package inductance internal emitter inductance (measured from the emitter lead 0.25 from package to emitter bond pad) l e e 13 e nh (1) pulse test: pulse width 300 m s, duty cycle 2%.
mgw12n120 3 motorola igbt device data v ce = 10 v 250 m s pulse width v ge = 20 v t j = 25 c v ce , collector-to-emitter voltage (volts) figure 1. output characteristics figure 2. output characteristics figure 3. transfer characteristics i c , collector current (amps) 12.5 v 17.5 v 15 v 7.5 v 30 20 0 8 4 0 t j = 125 c v ge , gate-to-emitter voltage (volts) i c , collector current (amps) 24 8 4 0 15 9 7 511 25 c v ge = 15 v 250 m s pulse width figure 4. collectortoemitter saturation voltage versus junction temperature t j , junction temperature ( c) 3.8 3.2 2 150 50 0 -50 2.6 100 v ce , collector-to-emitter voltage (volts) 26 i c = 10 a 40 16 7.5 a typical electrical characteristics 13 5 a 10 7 3 15 v ge = 20 v t j = 125 c v ce , collector-to-emitter voltage (volts) i c , collector current (amps) 12.5 v 17.5 v 15 v 10 v 30 20 0 8 4 02 6 40 10 7 3 15 12 20 2.2 2.4 2.8 3.0 3.4 3.6 v ce , collector-to-emitter voltage (volts) figure 5. capacitance variation figure 6. gatetoemitter voltage versus total charge c oes 400 0 25 20 15 5 0 q g , total gate charge (nc) 16 8 0 35 5 0 c, capacitance (pf) 1200 10 c res c ies v ge , gate-to-emitter voltage (volts) 4 q t t j = 25 c i c = 10 a v ge = 15 v 1600 30 10 t j = 25 c v ge = 0 v 12 800 25 20 15 q 2 q 1
mgw12n120 4 motorola igbt device data i c , collector current (amps) figure 7. reverse biased safe operating area v ce , collector-to-emitter voltage (volts) 100 10 0.1 1000 1 1 100 10 v ge = 15 v r ge = 20 w t j 125 c 10000 figure 8. thermal response t, time (s) r(t), normalized effective transient thermal resistance 1.0 0.1 0.01 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.02 d = 0.5 0.05 0.01 single pulse 0.1 0.2
mgw12n120 5 motorola igbt device data package dimensions case 340k01 to247ae issue a style 4: pin 1. gate 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. r p a k v f d g u l e 0.25 (0.010) m tb m 0.25 (0.010) m yq s j h c 4 123 t b y q dim min max min max inches millimeters a 19.7 20.3 0.776 0.799 b 15.3 15.9 0.602 0.626 c 4.7 5.3 0.185 0.209 d 1.0 1.4 0.039 0.055 e 1.27 ref 0.050 ref f 2.0 2.4 0.079 0.094 g 5.5 bsc 0.216 bsc h 2.2 2.6 0.087 0.102 j 0.4 0.8 0.016 0.031 k 14.2 14.8 0.559 0.583 l 5.5 nom 0.217 nom p 3.7 4.3 0.146 0.169 q 3.55 3.65 0.140 0.144 r 5.0 nom 0.197 nom u 5.5 bsc 0.217 bsc v 3.0 3.4 0.118 0.134
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